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ILD1214EL40 High Power L-Band Transistor Supplying 40W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
1.201.4040144216ms, 50%30InputPL32A1
ILD1214EL40

ILD1214EL40 is a high power LDMOS transistor designed for L-band radar applications operating over the 1.215 - 1.400 GHz instantaneous frequency band. Under 5ms/20% pulsing conditions it easily supplies a minimum of 40 W of peak output power with over 12db gain. Since it operates under Class B or AB bias it exhibits a fairly linear Pin versus Pout transfer characteristic, which allows operation at reduced output power levels. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.

FEATURES

  • Silicon LDMOS FET
  • Matched to 50-ohms
  • 40W Output Power
  • 100% High Power RF Tested
  • Class AB or B Operation

APPLICATIONS

  • L-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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