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ILD1214L250 High Power L-Band Transistor Supplying 250W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
1.201.4025013601ms, 10%30Input & OutputPL124A1
ILD1214L250

ILD1214L250 is a high power pulsed transistor designed for L-band systems operating at 1.2 – 1.4 GHz. Operating at a pulse width of 1ms with a duty factor of 10%, this dual MOSFET device supplies a minimum of 250W of peak pulse power across the instantaneous operating bandwidth. Fabricated with all gold metal contact, wire bonding and package for maximum reliability. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.

FEATURES

  • Silicon LDMOS FET
  • Matched to 50-ohms
  • 250W Output Power
  • 100% High Power RF Tested
  • Class AB Operation

APPLICATIONS

  • L-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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