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ILD1214M60 High Power L-Band Transistor Supplying 60W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
1.201.40601448300µs, 10%30Input & OutputPL44B1
ILD1214M60

ILD1214M60 is a high power LDMOS transistor designed for the frequency band 1.215 - 1.400 GHz. Operating 3at 300us-10% pulse conditions this LDMOS FET device supplies a minimum of 60W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.

FEATURES

  • Silicon LDMOS FET
  • Matched to 50-ohms
  • 60W Output Power
  • 100% High Power RF Tested
  • Class AB Operation

APPLICATIONS

  • L-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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