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ILD2731M30 High Power S-Band Transistor Supplying 30W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
2.703.10301346100µs, 10%28Input & OutputPL32A1
ILD2731M30

ILD2731M30 is a high power LDMOS transistor designed for S-band radar applications operating over the 2.7 - 3.1 GHz instantaneous frequency band. Under 300us/10% pulsing conditions it easily supplies a minimum of 30W of peak output power with well over 10dB gain. Since it operates under Class B or AB bias it exhibits a fairly linear Pin versus Pout transfer characteristic, which allows operation at reduced output power levels. With appropriate rating, it is operable under nearly any pulse width and duty factor condition. It operates with spectral purity into output VSWR with simultaneous input power overdrive. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.

FEATURES

  • Silicon LDMOS FET
  • Matched to 50-ohms
  • 30W Output Power
  • 100% High Power RF Tested
  • Class AB or B Operation

APPLICATIONS

  • S-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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