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ILD2933M130 High Power S-Band Transistor Supplying 130W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
2.903.301301145300µs, 10%32Input & OutputPL84A1
ILD2933M130

ILD2933M130 is a high power LDMOS transistor designed for S-band radar applications operating over the 2.9 – 3.3 GHz instantaneous frequency band. Under 300us / 10% pulsing conditions it supplies a minimum of 130 W of peak output power with 11dB gain typically. Specified operation is with Class AB bias. The broadband test fixture includes a temperature compensated bias network. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.

FEATURES

  • Silicon LDMOS FET
  • Matched to 50-ohms
  • 130W Output Power
  • 100% High Power RF Tested
  • Class AB Operation

APPLICATIONS

  • S-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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