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ILD3135M120 High Power S-Band Transistor Supplying 120W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
3.103.501201041300µs, 10%32Input & OutputPL84A1
ILD3135M120

ILD3135M120 is a high power LDMOS transistor designed for S-band radar applications operating over the 3.1 – 3.5 GHz instantaneous frequency band. Under 300us / 10% pulsing conditions it supplies a minimum of 120 W of peak output power with 10dB gain typically. Specified operation is with Class AB bias. The broadband test fixture includes a temperature compensated bias network. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.

FEATURES

  • Silicon LDMOS FET
  • Matched to 50-ohms
  • 120W Output Power
  • 100% High Power RF Tested
  • Class AB Operation

APPLICATIONS

  • S-Band Radar

EXPORT STATUS

  • 3A001


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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