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ILD3135M30 High Power S-Band Transistor Supplying 30W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
3.103.50301040300µs, 10%32Input & OutputPL32A1
ILD3135M30

ILD3135M30 is a high power transistor designed for S-band radar applications operating over the 3.1 – 3.5 GHz instantaneous frequency band. Under 300us / 10% pulse conditions it supplies a minimum of 30 W of peak output power with 10dB gain typically. Specified operation is with Class AB bias. The device also may be operated with Class A or B bias. When appropriately rated, it is operable under a wide range of pulse widths and duty factors. It operates with spectral purity into all phases of 3:1 output load VSWR. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.

FEATURES

  • Silicon LDMOS FET
  • Matched to 50-ohms
  • 100W Output Power
  • 100% High Power RF Tested
  • Class AB Operation

APPLICATIONS

  • S-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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