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IB1214M375 High Power L-Band Transistor Supplying 375W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
1.201.40375960300µs, 10%42Input & OutputP64A28
IB1214M375

B1214M375 high power pulsed radar transistor device designed for L-band radar systems operating over the instantaneous bandwidth of 1.215-1.400 GHz. While operating in Class C mode this common base device supplies a minimum of 375W of peak pulse power under the conditions of 300us pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters.

FEATURES

  • Silicon Bipolar
  • Matched to 50-ohms
  • 375W Output Power
  • 100% High Power RF Tested
  • Class C Operation

APPLICATIONS

  • L-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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