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IGT5259CW25 New Fully-Matched Transistor, Offers 25W, CW at 5-6 GHz

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
Matching: OhmPackage
5.205.90251248CW3650PL44C2
IGT5259CW25

IGT5259CW25 is fully matched to 50-Ohms that operates at 5.2 – 5.9 GHz of instantaneous operating frequency range, a minimum of 25W of output power and 36V drain bias. It features 12dB of gain, and 48% efficiency at CW conditions. Negative gate voltage and bias sequencing are required when utilizing this transistor. This device comes in Integra’s new package PL44C2CPC. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

  • GaN-on-SiC Technology
  • 25W Output Power
  • Pre-matched Internal Impedance
  • 100% High Power RF Tested

APPLICATIONS

  • TBD

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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