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NEW PRODUCTS

New Fully-Matched High Power GaN/SiC Transistor Offers 25 W CW at 5-6 GHz

IGT5259CW25 is a fully matched to 50-Ohms RF Power Transistor that operates at 5.2 - 5.9 GHz of instantaneous operating frequency range with a minimum of 25 W of output power and 36V drain bias. It features 12 dB of gain, and 48% efficiency [...]

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NEW PRODUCTS

New Line of GaN/SiC RF Power Modules Help Simplify Radar Amplifier Design

We are pleased to announce the formal launch of our new line of over a dozen standardized RF Power Modules (aka Pallets). Differentiating these integrated standard modules from custom or build-to-print, PCB amplifier assemblies, or "pallets", [...]

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NEW PRODUCTS

High Power IFF Transistor Best Suited for L-Band Avionics Offering 120 W

Integra offers a IFF avionics transistor offering 120W peak output power using GaN/SiC technology. Designed for IFF avionic applications, IGN1011L120 is a high power GaN transistor, specified for use under Class AB operation. This transistor operates [...]

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NEW PRODUCTS

High Power L-Band Avionics Transistor Up to 1200W

We are excited to offer IGN1011L1200, a GaN power transistor, best suited for L-band avionics. IGN1011L1200 is a GaN-on-SiC HEMT technology, offering 1.03 - 1.09 GHz of operating frequency, a minimum of 1200W of peak pulse power, 50V supply voltage [...]

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NEW PRODUCTS

New L-Band RF Power Amplifier Module for IFF/SSR Systems Solves Avionic Challenges

We are excited to release a new RF power amplifier module/pallet designed to solve various size, weight, power, and cost challenges (SWaP-C) in high-performance L-band avionic systems. IGNP1011L2400 is a high power GaN-on-SiC RF power [...]

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NEW PRODUCTS

GaN-on-SiC Transistors for S-Band Radar Applications

Integra Technologies offers a pair of 135 W and a 130 W gallium nitride on silicon carbide (GaN/SiC) transistors for S-band radar applications. IGT2731M130 operates at the instantaneous operating frequency range of 2.7 to 3.1 GHz and IGT3135M135 [...]

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NEW PRODUCTS

Fully-Matched High-Power GaN/SiC Transistor Offers 50W at 5-6 GHz

Integra announces a fully-matched, GaN/SiC transistor, offering 50W at 5-6 GHz. Designed for pulsed C-Band Radar applications, the IGT5259L50 high-power GaN-on-SiC HEMT transistor is fully-matched to 50-ohms and supplies 50 W of peak pulsed output power.

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NEW PRODUCTS

New Products: Two High Power Pulsed Modules for L-Band Radar

Integra offers a high power pulsed avionics L-band module and a high efficiency, low input/output VSWR module. Designed for pulsed L-Band Radar applications, the IGT5259L50 high-power GaN-on-SiC HEMT transistor is fully-matched to 50-ohms and supplies 50 W of peak pulsed output power.

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