Frequency Matters Interview: Integra/Teledyne Discuss Game Changing 100V GaN Transistors
Microwave Journal editors Pat Hindle and Gary Lerude talk with Integra Technologies VP of Sales & Marketing, Tom Kole, and Teledyne e2v VP of Business Development, Mont Taylor, about 100V GaN transistor technology and its applications.
Teledyne e2v HiRel Partners with Integra Technologies Inc. to Launch 100V GaN/SiC RF Power Technology
Teledyne e2v HiRel Electronics, a leading provider of high reliability semiconductor solutions, today announced that it will be offering High Reliability qualified versions of California-based Integra Technologies, Inc. (Integra) new 100V Gallium Nitride on Silicon Carbide (GaN/SiC) power transistors.
Integra Technologies Launches Industry First 100V RF GaN/SiC Technology for Mission-Critical Defense Applications
Integra’s first 100V RF GaN product, the IGN1011S3600, delivers breakthrough output power performance of 3.6 kiloWatts at 70% efficiency for next generation avionic systems.
Frequency Matters: High Power Transistor Market Trends and New Innovative Modular Solution from Integra Technologies
Integra Technologies VP of Sales and Marketing talks with Microwave Journal® Editors Pat Hindle and Gary Lerude about the high power transistor market and their new innovative modular solution that offers plug and play pallet solutions.
New Products: Two High Power Pulsed Modules for L-Band Radar
Integra offers a high power pulsed avionics L-band module and a high efficiency, low input/output VSWR module. Designed for pulsed L-Band Radar applications, the IGT5259L50 high-power GaN-on-SiC HEMT transistor is fully-matched to 50-ohms and supplies 50 W of peak pulsed output power.
Fully-Matched High-Power GaN/SiC Transistor Offers 50W at 5-6 GHz
Integra announces a fully-matched, GaN/SiC transistor, offering 50W at 5-6 GHz. Designed for pulsed C-Band Radar applications, the IGT5259L50 high-power GaN-on-SiC HEMT transistor is fully-matched to 50-ohms and supplies 50 W of peak pulsed output power.
GaN-on-SiC Transistors for S-Band Radar Applications
Integra Technologies offers a pair of 135 W and a 130 W gallium nitride on silicon carbide (GaN/SiC) transistors for S-band radar applications. IGT2731M130 operates at the instantaneous operating frequency range of 2.7 to 3.1 GHz and IGT3135M135 [...]
New Fully-Matched High Power GaN/SiC Transistor Offers 25 W CW at 5-6 GHz
IGT5259CW25 is a fully matched to 50-Ohms RF Power Transistor that operates at 5.2 - 5.9 GHz of instantaneous operating frequency range with a minimum of 25 W of output power and 36V drain bias. It features 12 dB of gain, and 48% efficiency [...]
Integra Technologies Wins Air Force Contract to Accelerate Thermally Enhanced GaN/SiC Readiness
Integra Technologies announced today it has been awarded a two-year contract by the U.S. Air Force to accelerate technology and manufacturing readiness of its patented, Thermally-Enhanced GaN/SiC technology. Integra's GaN/SiC technology is ideal for high efficiency, solid-state RF power applications including high power radar systems requiring improved performance, increased range and reduced operating costs.
RF and Microwave Power Transistors and Power Amplifier Modules Selection Guide
Integra's new 2019 RF and Microwave Power Transistors and Power Amplifier Modules product selection guide provides a clean, captivating design, detailing their extensive line of RF power devices for use in radar system high power amplifier (HPA) designs.
Integra to Showcase New High Power C-Band Transistor at European Microwave Week
We are excited to attend this years European Microwave Week (EuMW), September 25th to 27th in Madrid, Spain. At EuMW, Integra will showcase our newly released high power GaN-on-SiC transistor IGT5259CW25. Offering frequency coverage of 5.2 to 5.9 GHz, [...]
Thomas Kole Discusses Integra's High Power Technologies with Everything RF
Our VP of Sales and Marketing, Thomas Kole, interviewed with everything RF to discuss Integra's history, high power RF devices, expert team of engineers, what differentiates Integra in this industry and Integra's 5 year plan. We are a company [...]
Integra Discusses Solutions for the Challenges in Upgrading TWTs with RF Globalnet at IMS
Integra Technologies lead engineer, Apet Barsegyan interviewed with RF Globalnet at the International Microwave Symposium, June 2018 in Philly to discuss solutions for the challenges in upgrading current TWTs in high-power radar & pulsed applications to the newest solid-state GaN HEMT tech.
International Microwave Symposium 2018
Integra is excited to be showcasing several new devices at this year's International Microwave Symposium in Philadelphia, PA. They will be at Booth #815.
Integra Launches New Brand Identity and Website
We are excited to announce the launch of our new brand identity and redesigned website. Integra has taken the opportunity of IMS 2018 to announce our new brand identity and website, both created by RF industry experts, Strand Marketing. "We [...]
New Tech Brief Describes How to Choose the Right RF Power Transistors
Integra has released their new tech brief "Zero-in on the Best RF Transistor Technology for Your Radar's High Power Amplifier Designs." The best solid-state, high power amplifiers (HPAs), especially those used in critical defense, aerospace, [...]
GaN-on-SiC Transistor Evaluation Kits Help Verify Performance in RF Systems
We are happy to offer Gallium Nitride on Silicon Carbide (GaN-on-SiC) HEMT transistor evaluation kits to designers evaluating this technology for their high power amplifier designs. Each kit is customized to include a designer's transistor [...]
High Power IFF Transistor Best Suited for L-Band Avionics Offering 120 W
Integra offers a IFF avionics transistor offering 120W peak output power using GaN/SiC technology. Designed for IFF avionic applications, IGN1011L120 is a high power GaN transistor, specified for use under Class AB operation. This transistor operates [...]
App. Note Demonstrates How to Utilize Fail-Safe Biasing in GaN Transistors
We have published an application note on to how to best utilize the fully automatic and fail-safe bias circuit feature in our line of high power GaN transistors that only requires a single positive voltage power supply. As GaN HEMT transistors are [...]
New L-Band RF Power Amplifier Module for IFF/SSR Systems Solves Avionic Challenges
We are excited to release a new RF power amplifier module/pallet designed to solve various size, weight, power, and cost challenges (SWaP-C) in high-performance L-band avionic systems. IGNP1011L2400 is a high power GaN-on-SiC RF power [...]
New Line of GaN/SiC RF Power Modules Help Simplify Radar Amplifier Design
We are pleased to announce the formal launch of our new line of over a dozen standardized RF Power Modules (aka Pallets). Differentiating these integrated standard modules from custom or build-to-print, PCB amplifier assemblies, or "pallets", [...]
White Paper Presents Rationale for High Voltage GaN HEMT Technology in Wideband Radar Applications
We are excited to offer a white paper describing the rationale for utilizing high voltage GaN HEMT technology in wideband radar and avionic systems. The signal discussed is a pulse of 100 ?s width and 10% duty cycle. This paper explores the [...]
High Power L-Band Avionics Transistor Up to 1200W
We are excited to offer IGN1011L1200, a GaN power transistor, best suited for L-band avionics. IGN1011L1200 is a GaN-on-SiC HEMT technology, offering 1.03 - 1.09 GHz of operating frequency, a minimum of 1200W of peak pulse power, 50V supply voltage [...]