New Fully-Matched High Power GaN/SiC Transistor Offers 25 W CW at 5-6 GHz
IGT5259CW25 is a fully matched to 50-Ohms RF Power Transistor that operates at 5.2 - 5.9 GHz of instantaneous operating frequency range with a minimum of 25 W of output power and 36V drain bias. It features 12 dB of gain, and 48% efficiency at CW conditions, and negative gate voltage and bias sequencing are required when utilizing this transistor.
This device comes in Integra's latest package PL44C2CPC. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
Learn more about IGT5259CW25 and download the data sheet.