GaN-on-SiC HEMT RF Power Transistors for the Latest Radar System Designs through C-Band

Integra’s gallium nitride on silicon carbide (GaN-on-SiC, GaN/SiC) HEMT RF Power Transistors are the latest in RF and microwave power transistor technology. They deliver high gain and high power levels from UHF through C-band, and their silicon carbide (SiC) substrate offers excellent heat extraction for long term reliability and optimal power density. This suite of devices includes models offering up to 77% power efficiency and up to 1200 W of power. They are ideally suited for high power amplifier (HPA) design in pulsed radar applications.

RF Power Transistors for New Designs
ModelFrequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse  width & Duty factorVoltage
(V)
MatchingPackage
COMPARE
1.031.03402265300µs, 10%50InputPL32A2
1.031.038001760128µs, 2%50InputPL84A1
1.031.03800176548x (32µs On, 18µs Off), 6.4%50InputPL84A1
1.031.031000176548x (32µs On, 18µs Off), 6.4%50InputPL84A1
1.091.098001762128µs, 2%50InputPL84A1
1.301.303001270CW36Input & OutputPL95A1
2.8562.85640116012µs, 3%50InputPL32A2
2.8562.856500126012µs, 3%50Input & OutputPL64A1
2.9982.99850012558µs, 1%50Input & OutputPL64A1
0.101.001001355CW28NonePL22D1
0.106.00151850CW50NonePL21A1
0.420.451602277100µs, 10%50InputPL44C1
0.961.215101840CW28InputPL32A2
0.961.215452157444x (7µs On, 6µs Off), 22.7%50InputPL32A2
0.961.2151251855444x (7µs On, 6µs Off), 22.7%50Input & OutputPL44C1
0.961.2152501863444x (7µs On, 6µs Off), 22.7%50Input & OutputPL44C1
0.961.2152501860444x (7µs On, 6µs Off), 22.7%50InputPL44C1
0.961.2155001565444x (7µs On, 6µs Off), 22.7%50Input & OutputPL95A1
0.961.215500186048x (32µs On, 18µs Off), 6.4%50InputPL44C1
0.961.2151501260CW28Input & OutputPL95A1
0.961.2153001470CW36Input & OutputPL95A1
1.0251.1530195532µs, 2%50InputPL32A2
1.0251.1540226532µs, 2%50InputPL32A2
1.0251.1540216048x (32µs On, 18µs Off), 6.4%50InputPL32A2
1.0251.151000165032µs, 2%50InputPL84A1
1.031.09152055128µs, 2%50InputPL32A2
1.031.094001665128µs, 2%50InputPL64A1
1.031.096001665128µs, 2%50InputPL64A1
1.031.098001660128µs, 2%50InputPL84A1
1.031.0960196548x (32µs On, 18µs Off), 6.4%50InputPL32A2
1.031.0970226548x (32µs On, 18µs Off), 6.4%50InputPL32A2
1.031.09120206048x (32µs On, 18µs Off), 6.4%50InputPL44C1
1.031.091000176548x (32µs On, 18µs Off), 6.4%50InputPL84A1
1.031.091200177548x (32µs On, 18µs Off), 6.4%50InputPL84A1
1.201.40601960300µs, 10%50Input & OutputPL44A1
1.201.401201960300µs, 10%50Input & OutputPL44C1
1.201.402501660300µs, 10%50Input & OutputPL44C1
1.201.405001460300µs, 10%50Input & OutputPL95A1
1.201.405001770100µs, 10%50InputPL44C1
1.201.406002071150µs, 10%50InputPL64A1
1.201.406501372300µs, 10%50Input & OutputPL95A1
1.201.40100016655µs, 1.5%50Input & OutputPL84A1
1.201.401516555ms, 30%50Input & OutputPL32A2
1.201.403016605ms, 30%42Input & OutputPL32A2
1.201.4012518552ms, 20%50Input & OutputPL44C1
1.201.4038012605ms, 30%42Input & OutputPL95A1
1.201.4050016652ms, 20%50Input & OutputPL95A1
1.201.403802054150µs, 10%50InputPL44C1
1.301.456501665300µs, 10%60InputPL84A1
2.402.904001350300µs, 10%48Input & OutputPL84A1
2.702.902501159300µs, 10%50Input & OutputPL64A1
2.702.904001158300µs, 10%50Input & OutputPL64A1
2.702.905001260300µs, 10%50Input & OutputPL84A1
2.703.00651558300µs, 20%32Input & OutputPL32A1
2.703.1051548300µs, 10%40InputPL32A1
2.703.10801450100µs, 10%40Input & OutputPL32A1
2.703.101201365100µs, 20%30Input & OutputPL44C1
2.703.101301555100µs, 10%40Input & OutputPL32A1
2.703.101801358100µs, 10%50Input & OutputPL32A1
2.703.102001454300µs, 10%44Input & OutputPL64A1
2.703.1010154040ms, 50%32InputPL32A2
2.703.1020014543ms, 30%42Input & OutputPL64A1
2.703.20101648100µs, 10%40Input & OutputPL32A2
2.903.20751355100µs, 10%45Input & OutputPL32A1
3.103.501351355300µs, 10%50Input & OutputPL32A1
3.103.502501350300µs, 10%50Input & OutputPL44C1
3.103.501216503ms, 30%46InputPL32A2
3.103.5011514513ms, 30%46Input & OutputPL44C1
3.804.201301457100µs, 2%50Input & OutputPL32A1
5.205.90801348300µs, 10%50Input & OutputPL32A1
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