Event

We are excited to attend this years European Microwave Week (EuMW), September 25th to 27th in Madrid, Spain. At EuMW, Integra will showcase our newly released high power GaN-on-SiC transistor IGT5259CW25. Offering frequency coverage of 5.2 to 5.9 GHz, [...]

New Product

We are excited to offer IGN1011L1200, a GaN power transistor, best suited for L-band avionics. IGN1011L1200 is a GaN-on-SiC HEMT technology, offering 1.03 - 1.09 GHz of operating frequency, a minimum of 1200W of peak pulse power, 50V supply voltage [...]

Company News

Our VP of Sales and Marketing, Thomas Kole, interviewed with everything RF to discuss Integra's history, high power RF devices, expert team of engineers, what differentiates Integra in this industry and Integra's 5 year plan. We are a company [...]

New Product

Integra offers a IFF avionics transistor offering 120W peak output power using GaN/SiC technology. Designed for IFF avionic applications, IGN1011L120 is a high power GaN transistor, specified for use under Class AB operation. This transistor operates [...]

Resource

We are excited to offer a white paper describing the rationale for utilizing high voltage GaN HEMT technology in wideband radar and avionic systems. The signal discussed is a pulse of 100 μs width and 10% duty cycle. This paper explores the [...]

Resource

We proudly present a white paper written by Integra’s Daniel Koyama, Apet Barsegyan, and John Walker, describing the implications of using kW-level GaN transistors in radar and avionic systems. This paper examines the effect of using normal [...]

New Product

We are pleased to announce the formal launch of our new line of over a dozen standardized RF Power Modules (aka Pallets). Differentiating these integrated standard modules from custom or build-to-print, PCB amplifier assemblies, or “pallets”, [...]

Resource

Integra's new 2018 product selection guide provides a clean, captivating design, detailing their extensive line of RF power devices. This selection guide offers unique expertise in optimizing standard and custom RF power solutions for radar. [...]

Video

Integra Technologies lead engineer, Apet Barsegyan interviewed with RF Globalnet at the International Microwave Symposium, June 2018 in Philly to discuss solutions for the challenges in upgrading current TWTs in high-power radar & pulsed applications [...]

Resource

Integra has released their new tech brief "Zero-in on the Best RF Transistor Technology for Your Radar's High Power Amplifier Designs." The best solid-state, high power amplifiers (HPAs), especially those used in critical defense, aerospace, [...]

Company News

We are excited to announce the launch of our new brand identity and redesigned website. Integra has taken the opportunity of IMS 2018 to announce our new brand identity and website, both created by RF industry experts, Strand Marketing. “We [...]

Company News

Microwave Journal interviews Integra's CEO, Suja Ramnath on her plans for innovation, growth and what's setting Integra apart from other RF power companies. She starts with a snapshot on how we began: "Integra was launched in [...]

New Product

IGT5259CW25 is a fully matched to 50-Ohms RF Power Transistor  that operates at 5.2 – 5.9 GHz of instantaneous operating frequency range with a minimum of 25 W of output power and 36V drain bias. It features 12 dB of gain, and 48% efficiency [...]

New Product

Integra Technologies offers a pair of 135 W and a 130 W gallium nitride on silicon carbide (GaN/SiC) transistors for S-band radar applications. IGT2731M130 operates at the instantaneous operating frequency range of 2.7 to 3.1 GHz and IGT3135M135 [...]

New Product

Integra announces a fully-matched, GaN/SiC transistor, offering 50W at 5-6 GHz. Designed for pulsed C-Band Radar applications, the IGT5259L50 high-power GaN-on-SiC HEMT transistor is fully-matched to 50-ohms and supplies 50 W of peak pulsed output power [...]

New Product

Integra offers a high power pulsed avionics L-band module and a high efficiency, low input/output VSWR module. IGNP0912L1KW is a 50-ohm matched GaN-based high power pulsed pallet amplifier for L- band avionics systems operating over the instantaneous [...]

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