We are excited to offer IGN1011L1200, a GaN power transistor, best suited for L-band avionics.
IGN1011L1200 is a GaN-on-SiC HEMT technology, offering 1.03 - 1.09 GHz of operating frequency, a minimum of 1200W of peak pulse power, 50V supply voltage and 6.4% duty factor. With typical >17dB gain and 75% efficiency, IGN1011L1200 is a GEN-2 device. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
This L-band avionic transistor is specified for use under class AB operation where negative gate voltage and bias sequencing is required. IGN1011L1200 is 100% high power RF tested in a fixed tuned RF test fixture.
Learn more about IGN1011L1200 and download the datasheet.