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Integra to Showcase Several RF Power Devices at IMS 2018

Integra is excited to be showcasing several new devices at this year’s International Microwave Symposium in Philadelphia, PA. They will be at Booth #815.

In addition to announcing their new brand identity created by industry experts, Strand Marketing, Integra will be reviewing an exciting array of new 50-Ohm (fully matched) RF Power Transistors and integrated RF Power Modules (aka “Pallets”) for pulsed radar applications.

IGNP0912L1KW is a 50-Ohm GaN/SiC, RF Power Module for L- Band avionics systems operating over the instantaneous bandwidth of 0.960 - 1.215 GHz. This integrated amplifier module supplies a minimum of 1000W of peak pulse power, under the conditions of 2.5ms pulse width, and 20% duty cycle, while offering excellent thermal stability. IGT5259L50 is a 50-Ohm GaN/SiC transistor, offering 50W at 5-6 GHz for pulsed C-band radar applications. IGN1214L500B is a high-power GaN/SiC HEMT transistor that supplies 500W at 1.2 - 1.4 GHz, and offers 50V drain bias, 15.5dB gain, and 65% efficiency. This transistor is designed for long-pulse L-band radar applications. Learn more about these 50-ohm transistors and more >>

Visit us at IMS 2018 to learn more about our new brand and how Integra can help you find your power!

 

 

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