Integra is excited to be showcasing several new devices at this year’s International Microwave Symposium in Philadelphia, PA. They will be at Booth #815.
In addition to announcing their new brand identity created by industry experts, Strand Marketing, Integra will be reviewing an exciting array of new 50-Ohm (fully matched) RF Power Transistors and integrated RF Power Modules (aka “Pallets”) for pulsed radar applications.
IGNP0912L1KW is a 50-Ohm GaN/SiC, RF Power Module for L- Band avionics systems operating over the instantaneous bandwidth of 0.960 - 1.215 GHz. This integrated amplifier module supplies a minimum of 1000W of peak pulse power, under the conditions of 2.5ms pulse width, and 20% duty cycle, while offering excellent thermal stability. IGT5259L50 is a 50-Ohm GaN/SiC transistor, offering 50W at 5-6 GHz for pulsed C-band radar applications. IGN1214L500B is a high-power GaN/SiC HEMT transistor that supplies 500W at 1.2 - 1.4 GHz, and offers 50V drain bias, 15.5dB gain, and 65% efficiency. This transistor is designed for long-pulse L-band radar applications. All Updates