New Product

IGT5259CW25 is a fully matched to 50-Ohms RF Power Transistor  that operates at 5.2 – 5.9 GHz of instantaneous operating frequency range with a minimum of 25 W of output power and 36V drain bias. It features 12 dB of gain, and 48% efficiency [...]

New Product

Integra Technologies offers a pair of 135 W and a 130 W gallium nitride on silicon carbide (GaN/SiC) transistors for S-band radar applications. IGT2731M130 operates at the instantaneous operating frequency range of 2.7 to 3.1 GHz and IGT3135M135 [...]

New Product

Integra announces a fully-matched, GaN/SiC transistor, offering 50W at 5-6 GHz. Designed for pulsed C-Band Radar applications, the IGT5259L50 high-power GaN-on-SiC HEMT transistor is fully-matched to 50-ohms and supplies 50 W of peak pulsed output power [...]

New Product

Integra offers a high power pulsed avionics L-band module and a high efficiency, low input/output VSWR module. IGNP0912L1KW is a 50-ohm matched GaN-based high power pulsed pallet amplifier for L- band avionics systems operating over the instantaneous [...]

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