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We have published an application note on to how to best utilize the fully automatic and fail-safe bias circuit feature in our line of high power GaN transistors that only requires a single positive voltage power supply. As GaN HEMT transistors are [...]

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We are happy to offer Gallium Nitride on Silicon Carbide (GaN-on-SiC) HEMT transistor evaluation kits to designers evaluating this technology for their high power amplifier designs. Each kit is customized to include a designer’s transistor [...]

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We are excited to offer a white paper describing the rationale for utilizing high voltage GaN HEMT technology in wideband radar and avionic systems. The signal discussed is a pulse of 100 μs width and 10% duty cycle. This paper explores the [...]

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We proudly present a white paper written by Integra’s Daniel Koyama, Apet Barsegyan, and John Walker, describing the implications of using kW-level GaN transistors in radar and avionic systems. This paper examines the effect of using normal [...]

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Integra's new 2018 RF and Microwave Power Transistors and Power Amplifier Modules product selection guide provides a clean, captivating design, detailing their extensive line of RF power devices for use in radar system high power amplifier (HPA) designs. This [...]

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Integra has released their new tech brief "Zero-in on the Best RF Transistor Technology for Your Radar's High Power Amplifier Designs." The best solid-state, high power amplifiers (HPAs), especially those used in critical defense, aerospace, [...]

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