IGN0450M4500 is a high power GaN-on-SiC push-pull RF power transistor that has been designed to suit the unique needs of P band radar systems. It operates over the full 405- 450 MHz frequency range. Under 300µs, 6% duty cycle pulse conditions, it supplies a minimum of 4500 W of peak output power, with typically 24 dB of associated gain and 72% efficiency. It operates from a 100 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with thermal enhancement and uses an epoxy-sealed ceramic lid.