IGN0910S5000 and IGN0910S5000S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of Medical and ISM systems. Under 1µs, 1% duty cycle pulse conditions, they typically supply 5kW of peak output power with typically > 19dB of gain and 80% efficiency. They operate from a 100 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.