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IGN2934S400
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN2934S400 | 2.9 | 3.4 | 400 | 13 | 60 | 1µs, 1% | 90 | Input & Output | PL44E1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.9
3.4
400
13
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
60
1µs, 1%
90
Input & Output
IGN2934S400 and IGN2934S400S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of modern radar systems. They supply a minimum of 400W of peak output power, with an associated 13dB of gain typically and 50% efficiency. They operate from a 90V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
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