top of page
IGN0450M6000
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN0450M6000 | 0.41 | 0.45 | 6000 | 21.5 | 80 | 250µs, 5% | 120 | Input | PL124A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.41
0.45
6000
21.5
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
80
250µs, 5%
120
Input
IGN0450M6000 is high power GaN-on-SiC RF power transistor that has been designed specifically for use in P-band radar systems. It operates over the full bandwidth of 410 - 450 MHz. It supplies a minimum of 6kW of peak output power, with typically 20 dB of associated gain and 75% efficiency. It operates from a 120 V supply voltage.
bottom of page