IGN0912S5000 and IGN0912S5000S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of TACAN, DME and IFF/SSR avionics systems. Under 32µs, 4% duty cycle pulse conditions, they supply 5000 W of peak output power, with 18dB of associated gain and 70% efficiency. They operate from a 125 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.