top of page

IGN145

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN145
0.04
0.05
1200
28
83
100µs, 10 %
100
None
PL32C2
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.04
0.05
1200
28
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
83
100µs, 10 %
100
None

IGN145 and IGN145S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of VHF band systems. They operate over the full 40 - 50 MHz frequency range. Under 100µs, 10% duty cycle pulse conditions, they supply a minimum of 1000 W of peak output power, with typically >28 dB of gain and 83% efficiency. They operate from a 100 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >1000W

Exceptionally High Efficiency - up to 90%

100% RF Tested Under 100µs, 10 % duty cycle pulse conditions

RoHS and REACH Compliant

IGN145 has a bolt-down flange, IGN145S is the earless flange option

APPLICATION

VHF-band Systems

EXPORT STATUS

EAR99

bottom of page