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IGN2425S1500

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN2425S1500
2.4
2.5
1500
15
58
50µs, 1%
100
Input & Output
PL44E1
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.4
2.5
1500
15
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
58
50µs, 1%
100
Input & Output

IGN2425S1500 is a high power GaN-on-SiC RF power transistor. It operates over 2.4 - 2.5 GHz. Under 50 μs, 1% duty cycle pulse conditions it supplies a minimum of 1.5 kW of peak output power, with typically 15.5 dB of associated gain and 58% efficiency. It operates from a 100 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >1500 W

Pre-matched Input and Output Impedance

High Efficiency - 65% typical

RoHS and REACH Compliant

APPLICATION

Medical

EXPORT STATUS

EAR99

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