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IGN2729M1500

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN2729M1500
2.7
2.9
1500
14
50
100 µs, 10%
100
Input & Output
PL44E1
IGN2729M1500
2.7
2.9
1500
13
60
100µs, 10%
100
Input & Output
PL44E1
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
2.9
1500
14
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
50
100 µs, 10%
100
Input & Output

IGN2729M1500 and IGN2729M1500S are high power GaN-onSiC RF power transistors that have been designed to suit the unique needs of modern radar systems. They supply a minimum of 1500W of peak output power, with typically 14 dB of associated gain and 50% efficiency. They operate from a 100V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >1500W

Pre-matched Input and Output Impedances

High Efficiency - up to 55%

100% RF Tested Under 100 µs, 10% duty cycle pulse conditions

RoHS and REACH Compliant

APPLICATION

S-band Radar Systems

EXPORT STATUS

3A001

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