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IGNP0912S5000

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGNP0912S5000
0.96
1.11
5000
18
70
32µs, 4%
125
Input & Output
Pallet
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.96
1.11
5000
18
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
70
32µs, 4%
125
Input & Output

IGNP0912S5000 is a high power RF power amplifier pallet that has been desIgned to suit the unique needs of TACAN, DME and IFF/ SSR avionics systems. Under 32µs, 4% duty cycle pulse conditions, it supplies 5000 W of peak output power, with 18dB of associated gain and 70% efficiency. It operates from a 125 V supply voltage.

FEATURES

GaN on SiC HEMT Technology

Output Power >5000 W

Input impedance fully matched to 50Ω

High Efficiency - up to 75% during the RF pulse

100% RF Tested

APPLICATION

• TACAN and DME Systems
• IFF/SSR Systems

EXPORT STATUS

EAR99

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