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IGNP1300S3600

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGNP1300S3600
1.3
1.3
3600
18.5
73
10µs, 1%
100
Input & Output
Pallet
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.3
1.3
3600
18.5
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
73
10µs, 1%
100
Input & Output

IGNP1300S3600 is a high power GaN-on-SiC RF power
module. It supplies a minimum of 3600 W of peak output
power, with typically >18.5 dB of associated gain and
73% efficiency. It operates from a 100 V supply voltage.

FEATURES

GaN on SiC HEMT Technology

Output Power >3600 W

High Efficiency - up to 78%

100% RF Tested Under 10µs, 1% duty cycle pulse conditions

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APPLICATION

Particle Accelerators, ISM systems

EXPORT STATUS

EAR99

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