top of page
IGNP2531M2600
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGNP2531M2600 | 2.5 | 3.1 | 2600 | 10 | 55 | 100µs, 1% | 100 | 2.0x4.76 inch |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.5
3.1
2600
10
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
55
100µs, 1%
100
IGNP2531M2600 is a high power GaN-on-SiC RF power module that has been designed to suit the unique needs of S-Band Directed Energy systems. It operates over the full 2.5-3.1 GHz frequency range. Under 100µs, 1% duty cycle pulse conditions it supplies a minimum of 2600 W of peak output power, with typically >12 dB of gain and 60% efficiency. It operates from a 100 V supply voltage.
bottom of page