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IGNP2729M2600

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGNP2729M2600
2.7
2.9
2600
14
50
100 µs, 10%
100
Input & Output
Pallet
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
2.9
2600
14
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
50
100 µs, 10%
100
Input & Output

IGNP2729M2600 is a high power GaN-on-SiC RF power amplifier pallet that has been designed to suit the unique needs of S-Band Radar systems. It operates over the full 2.7-2.9 GHz frequency range. Under 100 µs, 10% duty cycle pulse conditions it supplies 2.6 kW of peak output power, with typically 14dB of associated gain and 50% efficiency. It operates from a 100 V supply voltage.

SWaP-C²
• Size = Reduce radar system size by a 66% over competing systems
• Weight = Reduce radar system weight a factor of 55%
• System Power Density = 408W / in²
• Cost = Reduce system cost by >40%
• Complexity = Eliminate multiple combining layers

FEATURES

GaN on SiC HEMT Technology

Output Power >2.6 kW

Fully matched to 50Ω

High Efficiency

100% RF Tested Under 100 µs, 10% duty cycle pulse conditions

System Power in a component pallet form factor

APPLICATION

S-Band Radar Systems

EXPORT STATUS

3A001

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