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IGT2729M700
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGT2729M700 | 2.7 | 2.9 | 700 | 13 | 54 | 100µs, 1% | 100 | Input & Output | PM67A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
2.9
700
13
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
54
100µs, 1%
100
Input & Output
IGT2729M700 is a high power GaN-on-SiC RF power transistor that is fully matched to 50Ω at both the input and output. It supplies a minimum of 700W of peak output power, with typically >13dB of gain and 54% efficiency. It operates from a 100 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
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