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IGNP0912M2400
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.96
1.22
2400
21
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
70
24 x (3.5µs on, 11µs off) Pulse Length, 1.1% LTDC
75
Input & Output
Model | Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGNP0912M2400 | 0.96 | 1.22 | 2400 | 21 | 70 | 24 x (3.5µs on, 11µs off) Pulse Length, 1.1% LTDC | 75 | Input & Output | 4.250" x 2.236" |
High power GaN-on-SiC RF power module that has been designed to suit the unique needs of TACAN systems.
FEATURES
GaN on SiC HEMT Technology
Output Power >2400 W
Pre-matched Input Impedance
100% RF Tested under 24 x (3.5µs on, 11µs off), LTDC =1.1% pulse conditions
RoHS and REACH Compliant
APPLICATION
TACAN and DME Systems
EXPORT STATUS
EAR99
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