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IGNP1300S3600
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.3
1.3
3600
18.5
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
73
10µs, 1%
100
Input & Output
Model | Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGNP1300S3600 | 1.3 | 1.3 | 3600 | 18.5 | 73 | 10µs, 1% | 100 | Input & Output | 5.4" x 2.5" |
IGNP1300S3600 is a high power GaN-on-SiC RF power
module. It supplies a minimum of 3600 W of peak output
power, with typically >18.5 dB of associated gain and
73% efficiency. It operates from a 100 V supply voltage.
FEATURES
GaN on SiC HEMT Technology
Output Power >3600 W
High Efficiency - up to 78%
100% RF Tested Under 10µs, 1% duty cycle pulse conditions
APPLICATION
Particle Accelerators, ISM systems
EXPORT STATUS
EAR99
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