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IGNP2631S2600
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.6
3.1
2600
14
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
53
10µs,1%
100
Input & Output
Model | Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGNP2631S2600 | 2.6 | 3.1 | 2600 | 14 | 53 | 10µs,1% | 100 | Input & Output | 4.91” x 2.0” |
IGNP2631M2600 is a high power GaN-on-SiC RF power amplifier pallet that has been designed to suit the unique needs of S-Band Systems. It operates over the full 2.6 - 3.1 GHz frequency range. Under 10µs, 1% duty cycle pulse conditions it supplies a minimum of 2.6 kW of peak output power, with typically >14 dB of associated gain and 53% efficiency. It operates from a 100 V supply voltage.
FEATURES
GaN on SiC HEMT Technology
Output Power >2600W
Fully matched to 50Ω
High Efficiency
100% RF Tested Under 10µs, 1% duty cycle pulse conditions
APPLICATION
S-Band Directed Energy systems, S-Band Radar Systems
EXPORT STATUS
3A001
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