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IGNP2631S2600

Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.6
3.1
2600
14
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
53
10µs,1%
100
Input & Output
Model
Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGNP2631S2600
2.6
3.1
2600
14
53
10µs,1%
100
Input & Output
4.91” x 2.0”

IGNP2631M2600 is a high power GaN-on-SiC RF power amplifier pallet that has been designed to suit the unique needs of S-Band Systems. It operates over the full 2.6 - 3.1 GHz frequency range. Under 10µs, 1% duty cycle pulse conditions it supplies a minimum of 2.6 kW of peak output power, with typically >14 dB of associated gain and 53% efficiency. It operates from a 100 V supply voltage.

FEATURES

GaN on SiC HEMT Technology

Output Power >2600W

Fully matched to 50Ω

High Efficiency

100% RF Tested Under 10µs, 1% duty cycle pulse conditions

APPLICATION

S-Band Directed Energy systems, S-Band Radar Systems

EXPORT STATUS

3A001

Contact us

Integra Technologies Inc.
321 Coral Circle
El Segundo, CA 90245-4620.
310-606-0855

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