Model | Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN0105M135 | 0.1 | 0.46 | 135 | 20.5 | 55 | 100µs, 10% | 100 | Input | PL32C2 |
suit the unique needs of IFF/SSR avionics systems. Under
FEATURES
GaN on SiC HEMT Technology
Output Power >135W
Pre-matched Input Impedance
Incorporates RC feedback within the package between gate and
drain
High Efficiency - up to 60%
100% RF Tested Under 100ms, 10% duty cycle pulse conditions
APPLICATION
P-band Radar Systems
EXPORT STATUS
EAR99
Download CAD File
Request Quote
