Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
IGN0105M135 is a high power GaN-on-SiC push-pull RF power
transistor that has been designed to suit the unique needs of P band
radar systems. It operates over the full 100-460 MHz frequency range.
Under 100ms, 10% duty cycle pulse conditions, it supplies a minimum
of 135 W of peak output power, with typically 20.5 dB of gain and
55% efficiency. It operates from a 100 V supply voltage. For optimal
thermal efficiency, the transistor is housed in a metal-based package
with thermal enhancement and uses an epoxy-sealed ceramic lid.