Model | Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN0105M135 | 0.1 | 0.46 | 135 | 20.5 | 55 | 100µs, 10% | 100 | Input | PL32C2 |
IGN0105M135 is a high power GaN-on-SiC push-pull RF power
transistor that has been designed to suit the unique needs of P band
radar systems. It operates over the full 100-460 MHz frequency range.
Under 100ms, 10% duty cycle pulse conditions, it supplies a minimum
of 135 W of peak output power, with typically 20.5 dB of gain and
55% efficiency. It operates from a 100 V supply voltage. For optimal
thermal efficiency, the transistor is housed in a metal-based package
with thermal enhancement and uses an epoxy-sealed ceramic lid.
FEATURES
GaN on SiC HEMT Technology
Output Power >135W
Pre-matched Input Impedance
Incorporates RC feedback within the package between gate and
drain
High Efficiency - up to 60%
100% RF Tested Under 100ms, 10% duty cycle pulse conditions
APPLICATION
P-band Radar Systems
EXPORT STATUS
EAR99
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