IGN0105M135

P-Band, GaN/SiC, RF Power Transistor

Model
Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN0105M135
0.1
0.46
135
20.5
55
100µs, 10%
100
Input
PL32C2
ign0160um12.jpeg

IGN0105M135 is a high power GaN-on-SiC push-pull RF power
transistor that has been designed to suit the unique needs of P band
radar systems. It operates over the full 100-460 MHz frequency range.
Under 100ms, 10% duty cycle pulse conditions, it supplies a minimum
of 135 W of peak output power, with typically 20.5 dB of gain and
55% efficiency. It operates from a 100 V supply voltage. For optimal
thermal efficiency, the transistor is housed in a metal-based package
with thermal enhancement and uses an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >135W

Pre-matched Input Impedance

Incorporates RC feedback within the package between gate and
drain

High Efficiency - up to 60%

100% RF Tested Under 100ms, 10% duty cycle pulse conditions

APPLICATION

P-band Radar Systems

EXPORT STATUS

EAR99

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