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Model | Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
---|---|---|---|---|---|---|---|---|---|
IGN045M1000 | 0.04 | 0.05 | 1000 | 28 | 83 | 100µs, 10% | 100 | none | PL32C2 |

IGN045M1000 and IGN045M1000S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of VHF band systems. They operate over the full 40 - 50 MHz frequency range. Under 100µs, 10% duty cycle pulse conditions, they supply a minimum of 1000 W of peak output power, with typically >28 dB of gain and 83% efficiency. They operate from a 100 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
FEATURES..
GaN on SiC HEMT Technology
Output Power >1000W
Exceptionally High Efficiency - up to 90%
100% RF Tested Under 100µs, 10% duty cycle pulse conditions
RoHS and REACH Compliant
IGN045M1000 has a bolt-down flange, IGN045M1000S is the earless flange option
APPLICATION
VHF-band Systems
EXPORT STATUS
EAR99
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