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IGN045M1000

Model
Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN045M1000
0.04
0.05
1000
28
83
100µs, 10%
100
none
PL32C2
ign0160um12.jpeg

IGN045M1000 and IGN045M1000S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of VHF band systems. They operate over the full 40 - 50 MHz frequency range. Under 100µs, 10% duty cycle pulse conditions, they supply a minimum of 1000 W of peak output power, with typically >28 dB of gain and 83% efficiency. They operate from a 100 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES..

GaN on SiC HEMT Technology

Output Power >1000W

Exceptionally High Efficiency - up to 90%

100% RF Tested Under 100µs, 10% duty cycle pulse conditions

RoHS and REACH Compliant

IGN045M1000 has a bolt-down flange, IGN045M1000S is the earless flange option

APPLICATION

VHF-band Systems

EXPORT STATUS

EAR99

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