IGN0912M2500

Model
Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN0912M2500
0.96
1.22
2500
18
70
24 x (3.5µs on, 11µs off) 1.1%
125
Input & Output
PL95A1
ign0160um12.jpeg

IGN0912M2500 and IGN0912M2500S are high power GaN-on SiC RF power transistors that have been designed to suit the unique needs of TACAN systems. Under 24 x (3.5ms on, 11ms off), LTDC =1.1% duty cycle pulse conditions, they supply a minimum of 2500 W of peak output power, with typically > 17dB of associated gain and 70% efficiency. They operate from a 125V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >2500 W

Pre-matched Input and Output Impedance

High Efficiency - up to 75% during the RF pulse

100% RF Tested under 24 x (3.5ms on, 11ms off), LTDC =1.1% pulse conditions

RoHS and REACH Compliant

APPLICATION

TACAN and DME Systems

EXPORT STATUS

EAR99

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