Model | Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN0912M2500 | 0.96 | 1.22 | 2500 | 18 | 70 | 24 x (3.5µs on, 11µs off) 1.1% | 125 | Input & Output | PL95A1 |
IGN0912M2500 and IGN0912M2500S are high power GaN-on SiC RF power transistors that have been designed to suit the unique needs of TACAN systems. Under 24 x (3.5ms on, 11ms off), LTDC =1.1% duty cycle pulse conditions, they supply a minimum of 2500 W of peak output power, with typically > 17dB of associated gain and 70% efficiency. They operate from a 125V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
FEATURES
GaN on SiC HEMT Technology
Output Power >2500 W
Pre-matched Input and Output Impedance
High Efficiency - up to 75% during the RF pulse
100% RF Tested under 24 x (3.5ms on, 11ms off), LTDC =1.1% pulse conditions
RoHS and REACH Compliant
APPLICATION
TACAN and DME Systems
EXPORT STATUS
EAR99
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