IGN1011S3600

Model
Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN1011S3600
1.03
1.09
3600
19
63
32µs, 4%
100
Input
PL124A1
ign0160um12.jpeg

IGN1011S3600 and IGN1011S3600S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF/SSR avionics systems.
They operate at both 1030 and 1090 MHz. Under 32µs, 4% duty cycle pulse conditions, they typically
supply a minimum of 3600 W of peak output power, with typically >19dB of associated gain and 63% efficiency. They operate from a 100V supply voltage.
For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES.

GaN on SiC HEMT Technology

Output Power >3600 W

High Efficiency - up to 75% during the RF pulse

100% RF Tested

RoHS and REACH Compliant

APPLICATION

L-band Avionics IFF&SSR Systems,
Suitable for both uplink and downlink

EXPORT STATUS

EAR99

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