Model | Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1011S50HV | 1.03 | 1.09 | 50 | 20 | 65 | 32µs, 4% | 100 | Input | PL32C2 |
IGN1011S50HV and IGN1011S50HVS are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF and avionic systems. They operate at both 1030 and 1090 MHz. Under 32ms, 4% duty cycle pulse conditions, they supply a minimum of 50 W of peak output power. They operate from a 100V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
FEATURES
GaN on SiC HEMT Technology
Output Power >50W
Pre-matched Input Impedance
High Efficiency - up to 65%
100% RF Tested Under 32µs, 4% duty cycle pulse conditions
RoHS and REACH Compliant
APPLICATION
IFF and SSR Avionic Systems
EXPORT STATUS
EAR99
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