IGN1011S50HV

L-Band, GaN/SiC, RF Power Transistor

Model
Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN1011S50HV
1.03
1.09
50
20
65
32µs, 4%
100
Input
PL32C2
ign0160um12.jpeg

in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >50W

Pre-matched Input Impedance

High Efficiency - up to 65%

100% RF Tested Under 32µs, 4% duty cycle pulse conditions

RoHS and REACH Compliant

APPLICATION

IFF and SSR Avionic Systems

EXPORT STATUS

EAR99

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