IGN1030S3600

L-Band, GaN/SiC, RF Power Transistor

Model
Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN1030S3600
1.03
1.03
3600
19
75
32µs, 4%
100
Input
PL124A1
ign0160um12.jpeg

IGN1030S3600 and IGN1030S3600S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF/SSR avionics systems. Under 32ms, 4% duty cycle pulse conditions, they typically supply 3600 W of peak output power, with typically > 19dB of gain and 75% efficiency. They operate from a 100 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >3600W

Pre-matched Input Impedance

High Efficiency - up to 75% during RF pulse

100% RF Tested

RoHS and REACH Compliant

APPLICATION

L-Band Avionics IFF & SSR Systems, Suitable for both uplink and downlink

EXPORT STATUS

EAR99

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