Model | Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1030S3600 | 1.03 | 1.03 | 3600 | 19 | 75 | 32µs, 4% | 100 | Input | PL124A1 |
IGN1030S3600 and IGN1030S3600S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF/SSR avionics systems. Under 32ms, 4% duty cycle pulse conditions, they typically supply 3600 W of peak output power, with typically > 19dB of gain and 75% efficiency. They operate from a 100 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
FEATURES
GaN on SiC HEMT Technology
Output Power >3600W
Pre-matched Input Impedance
High Efficiency - up to 75% during RF pulse
100% RF Tested
RoHS and REACH Compliant
APPLICATION
L-Band Avionics IFF & SSR Systems, Suitable for both uplink and downlink
EXPORT STATUS
EAR99
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