IGN1030S5000

L-Band, GaN/SiC, RF Power Transistor

Model
Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN1030S5000
1.03
1.03
5000
19
73
32µs, 4%`
125
Input
PL124A1
ign0160um12.jpeg

IGN1030S5000 and IGN1030S5000S are high power GaN on-SiC RF power transistors that have been designed to suit the unique needs of IFF/SSR avionics systems. Under 32ms, 4% duty cycle pulse conditions, they typically supply 5000 W of peak output power, with 18.5dB of associated gain
and 68% efficiency. They operate from a 125 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >6000W

Pre-matched Input Impedance

High Efficiency - up to 73% during RF pulse

100% RF Tested

RoHS and REACH Compliant

APPLICATION

IFF and SSR Avionic Systems

EXPORT STATUS

EAR99

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