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Model | Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
---|---|---|---|---|---|---|---|---|---|
IGN1030S5000 | 1.03 | 1.03 | 5000 | 19 | 73 | 32µs, 4%` | 125 | Input | PL124A1 |

IGN1030S5000 and IGN1030S5000S are high power GaN on-SiC RF power transistors that have been designed to suit the unique needs of IFF/SSR avionics systems. Under 32ms, 4% duty cycle pulse conditions, they typically supply 5000 W of peak output power, with 18.5dB of associated gain
and 68% efficiency. They operate from a 125 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
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