IGN1030S5000 and IGN1030S5000S are high power GaN on-SiC RF power transistors that have been designed to suit the unique needs of IFF/SSR avionics systems. Under 32ms, 4% duty cycle pulse conditions, they typically supply 5000 W of peak output power, with 18.5dB of associated gain
and 68% efficiency. They operate from a 125 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.