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Model | Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1214M100HV | 1.2 | 1.4 | 100 | 17.5 | 55 | 300µs, 4% | 100 | Input | PL32C2 |
IGN1214M100HV and IGN1214M100HVS are high power GaN-on-SiC RF power transistors that have been designed specifically for use in L- band radar systems. They operate over the full bandwidth of 1.20 - 1.40 GHz. They supply a minimum of 100W of peak output power, with typically 17.5dB of associated gain and 55% efficiency. They operate from a 100V supply voltage.
FEATURES.
GaN on SiC HEMT Technology
Output Power 100 W Minimum
Pre-matched Input Impedance
100% RF Tested
RoHS and REACH Compliant
Enhanced thermal conductivity flange
APPLICATION
L-band Radar Systems
EXPORT STATUS
EAR99
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