IGN1214M100HV

Model
Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN1214M100HV
1.2
1.4
100
17.5
55
300µs, 4%
100
Input
PL32C2
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IGN1214M100HV and IGN1214M100HVS are high power GaN-on-SiC RF power transistors that have been designed specifically for use in L- band radar systems. They operate over the full bandwidth of 1.20 - 1.40 GHz. They supply a minimum of 100W of peak output power, with typically 17.5dB of associated gain and 55% efficiency. They operate from a 100V supply voltage.

FEATURES

GaN on SiC HEMT Technology

Output Power 100 W Minimum

Pre-matched Input Impedance

100% RF Tested

RoHS and REACH Compliant

Enhanced thermal conductivity flange

APPLICATION

L-band Radar Systems

EXPORT STATUS

EAR99

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