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Model | Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1214M1600 | 1.2 | 1.4 | 1600 | 17 | 70 | 100µs, 10% | 100 | Input | PL84A1 |
IGN1214M1600 and IGN1214M1600S are high power GaN-onSiC RF power transistors that have been designed to suit the unique needs of modern long-range radar systems. They supply a minimum of 1600 W of peak output power, with typically >17 dB of associated gain and 65% efficiency. They operate from a 100 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
FEATURES.
GaN on SiC HEMT Technology
Output Power >2500 W
Pre-matched Input and Output Impedance
High Efficiency - up to 75% during the RF pulse
100% RF Tested under 24 x (3.5ms on, 11µs off), LTDC =1.1% pulse conditions
RoHS and REACH Compliant
APPLICATION
TACAN and DME Systems
EXPORT STATUS
EAR99
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