IGN1214M1600

Model
Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN1214M1600
1.2
1.4
1600
17
70
100µs, 10%
100
Input
PL84A1
ign0160um12.jpeg

IGN1214M1600 and IGN1214M1600S are high power GaN-onSiC RF power transistors that have been designed to suit the unique needs of modern long-range radar systems. They supply a minimum of 1600 W of peak output power, with typically >17 dB of associated gain and 65% efficiency. They operate from a 100 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >2500 W

Pre-matched Input and Output Impedance

High Efficiency - up to 75% during the RF pulse

100% RF Tested under 24 x (3.5ms on, 11µs off), LTDC =1.1% pulse conditions

RoHS and REACH Compliant

APPLICATION

TACAN and DME Systems

EXPORT STATUS

EAR99

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