IGN1214M3200

Model
Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN1214M3200
1.2
1.4
3200
18
68
100µs, 4%
100
Input
PL124A1
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IGN1214M3200 and IGN1214M3200S are high power GaN-on- SiC RF power transistors that have been designed to suit the unique needs of modern long-range radar systems. They supply a minimum of 3200 W of peak output power, with typically >18 dB of associated gain and 68% efficiency. They operate from a 100 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES.

GaN on SiC HEMT Technology

Output Power >3200 W

Pre-matched Input Impedance

High Efficiency - up to 75%

100% RF Tested Under 100µs, 4% duty cycle pulse conditions

RoHS and REACH Compliant

APPLICATION

L-band Radar Systems

EXPORT STATUS

EAR99

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