IGN1300S3600

Model
Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN1300S3600
1.3
1.3
3600
18
70
10µs, 1%
100
Input
PL124A1
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IGN1300S3600 is a high power GaN-on-SiC RF power transistor. It operates at 1.3 GHz. Under 10µs, 1% duty cycle pulse conditions it supplies a minimum of 3600 W of peak output power, with typically 18 dB of gain and 70% efficiency. It operates from a 100 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES.

GaN on SiC HEMT Technology

Output Power >3600 W

Pre-matched Input Impedance

High Efficiency - 70% typical

RoHS and REACH Compliant

APPLICATION

ISM Systems

EXPORT STATUS

EAR99

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