IGN1300S3600 is a high power GaN-on-SiC RF power transistor. It operates at 1.3 GHz. Under 10µs, 1% duty cycle pulse conditions it supplies a minimum of 3600 W of peak output power, with typically 18 dB of gain and 70% efficiency. It operates from a 100 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.