IGN2729M1500

P-Band, GaN/SiC, RF Power Transistor

Model
Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN2729M1500
2.7
2.9
1500
15
50
100µs, 10%
100
Input & Output
PL84A1
ign0160um12.jpeg

IGN2729M1500 and IGN2729M1500S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of modern radar systems. They supply a minimum of 1500W of peak output power, with typically 15dB of gain and 50% efficiency. They operate from a 100 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power 1500W

Pre-matched Input and Output Impedances

High Efficiency - 50% typical

100% RF Tested Under 100ms, 10% duty cycle pulse conditions

RoHS and REACH Compliant

APPLICATION

S-Band Radar Systems

EXPORT STATUS

3A001

Download CAD File
Request Quote