IGN2729M1500

P-Band, GaN/SiC, RF Power Transistor

Model
Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN2729M1500
2.7
2.9
1500
15
50
100µs, 10%
100
Input & Output
PL84A1
ign0160um12.jpeg

5000 W of peak output power, with 18.5dB of associated gain

FEATURES

GaN on SiC HEMT Technology

Output Power 1500W

Pre-matched Input and Output Impedances

High Efficiency - 50% typical

100% RF Tested Under 100ms, 10% duty cycle pulse conditions

RoHS and REACH Compliant

APPLICATION

S-Band Radar Systems

EXPORT STATUS

3A001

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