Model | Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN2729M1500 | 2.7 | 2.9 | 1500 | 15 | 50 | 100µs, 10% | 100 | Input & Output | PL84A1 |
IGN2729M1500 and IGN2729M1500S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of modern radar systems. They supply a minimum of 1500W of peak output power, with typically 15dB of gain and 50% efficiency. They operate from a 100 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
FEATURES
GaN on SiC HEMT Technology
Output Power 1500W
Pre-matched Input and Output Impedances
High Efficiency - 50% typical
100% RF Tested Under 100ms, 10% duty cycle pulse conditions
RoHS and REACH Compliant
APPLICATION
S-Band Radar Systems
EXPORT STATUS
3A001
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