IGN2729M200HV

S-Band, GaN/SiC, RF Power Transistor

Model
Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN2729M200HV
2.7
2.9
200
15
45
100µs, 10%
100
Input
PL32A2
ign0160um12.jpeg

IGN2729M200HV and IGN2729M200HVS are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of S band radar systems. They operate over the complete 2.7 - 2.9 GHz frequency range. Under 100ms, 10% duty cycle pulse conditions, they supply a minimum of 200 W of peak output power. They operate from a 100 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >200W

Pre-matched Input Impedance

High Efficiency - up to 50%

100% RF Tested Under 100ms, 10% duty cycle pulse conditions

RoHS and REACH Compliant

APPLICATION

S-band Radar Systems

EXPORT STATUS

EAR99

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