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Model | Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGNP1030S5000 | 1.03 | 1.03 | 5000 | 19 | 73 | 32µs, 4% | 125 | Input & Output | Pallet |
IGNP1030S5000 is a high power GaN-on-SiC RF power module that has been designed to suit the unique needs of IFF/SSR avionics systems. Under 32µs, 4% duty cycle pulse conditions, it typically supplies 5000 W of peak output power, with 18.5dB of associated gain and 68% efficiency. It operates from a 125 V supply voltage.
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