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IGNP1214M1600

Model
Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGNP1214M1600
1.2
1.4
1600
17
70
100 µs, 10%
100
Input & Output
Pallet
ign0160um12.jpeg

IGNP1214M1600 is a high power GaN-on-SiC RF power module that has been designed to suit the unique needs of modern long-range radar systems. It supplies a minimum of 1600 W of peak output power, with typically >17 dB of associated gain and 65% efficiency. It operates from a 100 V supply voltage.

FEATURES.

GaN on SiC HEMT Technology

Output Power >1600 W

High Efficiency - up to 70%

100% RF Tested Under 100µs, 10% duty cycle pulse conditions

APPLICATION

L-band Radar Systems

EXPORT STATUS

EAR99

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