IGNP1214M3200

Model
Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGNP1214M3200
1.2
1.4
3200
18
75
100µs, 4%
100
Input & Output
Pallet
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IGNP1214M3200 is a high power GaN-on-SiC RF power module that has been designed to suit the unique needs of modern long-range radar systems. It supplies a minimum of 3200 W of peak output power, with typically >18 dB of associated gain and 68% efficiency. It operates from a 100 V supply voltage

FEATURES.

GaN on SiC HEMT Technology

Output Power >3200 W

High Efficiency - up to 75%

100% RF Tested Under 100µs, 4% duty cycle pulse conditions

APPLICATION

L-band Radar Systems

EXPORT STATUS

EAR99

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